Introducing the SD2933, a high-power N-channel enhancement mode MOSFET designed for high frequency and RF applications. This rugged device is built to deliver high power output with exceptional efficiency and reliability. With a maximum drain-source voltage of 65V and a continuous drain current of 100A, the SD2933 is suitable for a wide range of RF power amplification and linear amplifier applications. The SD2933 features a low on-resistance and low gate charge, resulting in minimal conduction and switching losses, making it ideal for high frequency operations. It also boasts a high input capacitance, ensuring excellent performance in RF applications. With its compact and robust design, the SD2933 is ready to meet the demands of high-power RF applications, including amateur radio, broadcast transmitters, and industrial RF equipment. Whether for commercial or industrial use, the SD2933 MOSFET delivers impressive performance and durability for high-power RF applications.
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