mrfe6s9060nr1

Introducing the MRFE6S9060NR1, a high-power RF transistor designed for industrial, scientific, and medical applications. This NPN silicon power transistor operates in the 960-1215 MHz frequency range and provides excellent performance and reliability in high-power amplifiers and linear applications. With a peak power output of 60 watts and a gain of 16.5 dB, this transistor is ideal for applications requiring high power and efficiency. The MRFE6S9060NR1 features internal input matching for ease of use and is housed in a compact and rugged package for easy integration into RF systems. With its high-performance characteristics, this transistor is well-suited for use in applications such as plasma generators, RF heating systems, and scientific instrumentation. For engineers and designers looking for a reliable and high-power RF transistor, the MRFE6S9060NR1 delivers exceptional performance and durability for demanding applications.