bsc077n12ns3gatma1

Introducing the BSC077N12NS3GATMA1, a high-efficiency power MOSFET designed for a wide range of applications. This N-channel MOSFET is part of Infineon's OptiMOS™ 5 family, offering industry-leading performance and reliability. With a low RDS(on) of 7.7 mΩ and a high current capability of 85 A, the BSC077N12NS3GATMA1 is ideal for power supplies, motor control, and other high-power applications. The MOSFET features a TO-263-3 package, making it easy to integrate into existing designs. Its advanced silicon technology also ensures low switching losses and high energy efficiency, contributing to overall system performance. In addition, the BSC077N12NS3GATMA1 is designed with Infineon's rugged planar technology, providing robustness and reliability even in harsh operating conditions. With its superior performance, compact package, and exceptional durability, this power MOSFET is the go-to choice for power electronics engineers looking to optimize their systems for efficiency and performance.