Introducing the BS170, a small signal N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for use in a wide range of electronic applications. This transistor is capable of delivering high performance with low power consumption, making it ideal for battery-powered devices and portable electronics. The BS170 features a low threshold voltage, allowing it to be easily driven by logic level signals, making it suitable for use in a variety of digital and analog circuits. With a maximum drain-source voltage of 60 volts and a continuous drain current of 500 mA, this MOSFET can handle a range of power requirements. With its compact and robust design, the BS170 is well-suited for use in consumer electronics, automotive applications, and industrial control systems. Whether you are designing a new product or upgrading an existing one, the BS170 offers reliable and efficient performance for your electronic circuits.
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