2n5109

Introducing the 2N5109, a versatile and high-performance NPN silicon transistor designed for a wide range of electronic applications. This transistor features a power dissipation of 625mW and a collector current of 200mA, making it suitable for use in amplifiers, oscillators, and RF applications. With a low noise figure and high gain, the 2N5109 is an ideal choice for high-frequency and low-level signal amplification. The rugged construction of the 2N5109 ensures reliable operation in demanding environments, and its compact and lightweight design makes it easy to integrate into various circuit designs. Whether you are building a radio frequency amplifier, a signal processing circuit, or a communication system, the 2N5109 offers the performance and reliability you need. With its wide operating temperature range and excellent thermal stability, the 2N5109 is a reliable choice for electronic designers and hobbyists alike. Experience the versatility and performance of the 2N5109 transistor for your next electronic project.